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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION *With TO-220 package *High breakdown voltage *High power dissipation APPLICATIONS *For general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA957 VCBO Collector-base voltage 2SA958 2SA957 VCEO Collector-emitter voltage 2SA958 VEBO IC IB B CONDITIONS VALUE -150 UNIT Open emitter -200 -150 Open base -200 Open collector -6 -2.0 -1.0 TC=25 30 150 -55~150 V V Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature V A A W PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SA957 VCEO(BR) Collector-emitter breakdown voltage 2SA958 VCEsat Collector-emitter saturation voltage 2SA957 ICBO Collector cut-off current 2SA958 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V IC=-0.7A; IB=-0.07A VCB=-150V; IE=0 IC=-25mA ,IB=0 CONDITIONS 2SA957 2SA958 MIN -150 TYP. MAX UNIT V -200 -1.5 V -100 A -1.0 40 20 mA MHz Switching times resistive load tr ts tf Rise time Storage time Fall time IC=-1.0A IB1=- IB2=-0.1A RL=20;VCC=-20V 0.4 1.5 0.5 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA957 2SA958 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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